Nucleation and deposition of platinum group metal films using ultraviolet irradiation

ABSTRACT

A method of depositing a platinum based metal film by CVD deposition includes bubbling a non-reactive gas through an organic platinum based metal precursor to facilitate transport of precursor vapor to the chamber. The platinum based film is deposited onto a non-silicon bearing substrate in a CVD deposition chamber in the presence of ultraviolet light at a predetermined temperature and under a predetermined pressure. The film is then annealed in an oxygen atmosphere at a sufficiently low temperature to avoid oxidation of substrate. The resulting film is free of silicide and consistently smooth and has good step coverage.

FIELD OF THE INVENTION

The invention relates generally to the chemical vapor deposition (CVD)of platinum group metals on an integrated circuit structure as acontinuous film and with good step coverage. The invention also relatesto integrated circuits having a platinum group metal layer, used, forexample, as the lower electrode in a capacitor.

DISCUSSION OF RELATED ART

Because of their high corrosion resistance, microelectronic deviceshaving platinum group metals are desired in applications where greatreliability is desired and also where a corrosive atmosphere may bepresent. A process is needed to deposit a platinum group metal havinggood step coverage and where the platinum film can be patterned to avoidan extra etching step.

Conventional methods of depositing platinum films suffer drawbacks inthat these methods are unable to consistently create a continuousuniformly thin platinum film that additionally has good step coverage.These conventional prior methods include vacuum deposition methods,sputtering methods and even chemical vapor deposition. Even in theconventional chemical vapor deposition methods it is difficult to createa continuous uniform platinum film with good step coverage.

This is likely due to the fact that when conventional platinumprecursors are used in the conventional chemical vapor depositionmethods, it is difficult to control the nucleation rate of the platinumfilms. At the outset of the platinum deposition process, the nucleationrate of the platinum film onto the surface of the substrate is veryslow; however, once nucleation does begin the deposition rate of theplatinum film onto the surface increases significantly. In fact, it isdifficult to control or even slow the rate of deposition once theconventional methods begin depositing platinum onto the surface of thesubstrate. In the conventional methods therefore, it is difficult tobegin the deposition process and even more difficult to thereaftercontrol the deposition rate so as to arrive at a uniform thin platinumfilm having good step coverage.

One example of the problem with using conventional methods to depositplatinum is discussed with reference to FIG. 1. Here it is desired todeposit a platinum layer 210 onto the side surfaces of a deep containercapacitor 230. The platinum layer 210 is formed by CVD deposition usinga conventional platinum precursor. As the process begins, a platinumfilm 210 forms on the upper layer 220 of the capacitor 200. Since it isdifficult to control the deposition rate of the platinum layer 210, theplatinum layer 210 quickly forms a thick layer on the upper layer 220 ofthe capacitor 230 before it can coat the inside walls of the capacitor230. That is, the quickly formed platinum layer 210 pinches togetherover the opening 230 in the capacitor 200 and very little platinum isable to form on the inside walls 240 or the bottom 250 of the capacitor230. Thus, an inconsistent platinum film is formed on the inside walls240 and the bottom 250 of the capacitor 230 without good step coverage.

One prior solution to increase the smoothness of the film deposited wasto increase the temperature at which the metal is deposited. When thetemperature at which the conventional CVD process operates is increased,the growth rate of the platinum also increases. While increasing thetemperature does result in a smoother film, the increased temperaturealso increases the deposition rate and the pinch-off effect, aspreviously described. If the temperature of the CVD process isdecreased, the growth rate of the platinum also decreases, resulting inbetter step coverage; however, when the temperature of the CVD processis decreased the carbon content of the deposited film increases,resulting in poor film quality.

To reduce the carbon content of the film, the conventional methods addedoxygen during the CVD process. The oxygen removed some of the carbonfrom the platinum film; however, the oxygen also increased thedeposition rate of the platinum resulting in a film similar to the hightemperature deposited film described above. Thus, with conventionalmethods it is difficult to achieve both good step coverage and a smoothcontinuous film, which is especially important in the manufacture of anintegrated circuit. Additionally, conventional methods often requirethat the platinum film be etched to remove the deposited platinum filmwhere it is not desired.

SUMMARY OF THE INVENTION

The present invention overcomes the drawbacks of patterning platinumgroup metals by conventional methods and provides a CVD method whichproduces a smooth, uniform, continuous film of a platinum group metalwhich also has good step coverage. The present invention also allows theplatinum film to be patterned onto a substrate. The invention includesdepositing the platinum metal group in conjunction with ultravioletlight using a CVD Process followed by low temperature annealing in orderto remove carbon in the platinum group metal.

The invention relates to the formation of a continuous film layer ofplatinum group metal by CVD. The invention may find many uses where athin uniform layer of platinum group metal is needed. For example, theinvention is useful in the computer microchip industry, such as for theundercoating electrode of a dielectric memory in a semiconductor device.The invention relates to a chemical vapor deposition method to depositthe platinum group metal onto a surface. The starting material forpreparation of the platinum group metal film may be any organic platinumgroup metal precursor suitable for deposition of the platinum groupmetal.

The invention provides a process for depositing a platinum metal on asubstrate which includes the steps of flowing a gas having adsorbedtherein a predetermined thickness of platinum metal precursor over thesubstrate at a selected temperature and pressure in the presence ofultraviolet light or flowing the platinum metal precursor over asubstrate and then irradiating the substrate with ultraviolet light. Theselected operating temperature is a temperature at which the platinumgroup metal deposits on the substrate, but less than a temperature atwhich the platinum group metal fails to smoothly deposit on thesubstrate. The pressure at which the process operates is a pressure atwhich the platinum group metal will deposit on the substrate in acontinuous film while maintaining good step coverage. The substrate is anon-silicon containing film. In order to avoid silicidation of platinumduring anneal, the substrate is then subjected to a low temperatureanneal in the presence of oxygen at a temperature low enough as to notoxidize the substrate. By carrying out this process, a platinum groupmetal film may be deposited on the exposed portions of the substrate ina uniform film.

The above and other advantages and features of the invention will bemore clearly understood from the following detailed description which isprovided in connection with the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a diagrammatic cross-sectional view of a portion of asemiconductor wafer with a platinum layer deposited according to theconventional methods.

FIG. 2 is a schematic view of an apparatus which may be used in thepresent invention.

FIG. 3 is a microscopic photograph of a platinum film deposited on asubstrate according to a method of the present invention.

FIG. 4 is a diagrammatic cross-sectional view of a portion of asemiconductor wafer at an early processing step according to oneembodiment of the present invention.

FIG. 5 is a diagrammatic cross-sectional view of a portion of asemiconductor wafer at a processing step subsequent to that shown inFIG. 4.

FIG. 6 is a diagrammatic cross-sectional view of a portion of asemiconductor wafer at a processing step subsequent to that shown inFIG. 5.

FIG. 7 is a diagrammatic cross-sectional view of a portion of asemiconductor wafer at a processing step subsequent to that shown inFIG. 6.

FIG. 8 is a diagrammatic cross-sectional view of a portion of asemiconductor wafer at a processing step subsequent to that shown inFIG. 7.

FIG. 9 is a diagrammatic cross-sectional view of a portion of asemiconductor wafer at a processing step subsequent to that shown inFIG. 8.

FIG. 10 is a diagrammatic cross-sectional view of a portion of asemiconductor wafer at a processing step subsequent to that shown inFIG. 9 showing a platinum lower electrode.

FIG. 11 is a diagrammatic cross-sectional view of a portion of asemiconductor wafer at a processing step subsequent to that shown inFIG. 10.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

The terms wafer or substrate used in the description include anysemiconductor-based structure in which to form the contact electrodestructure of this invention, provided the substrate is coated with abarrier layer as described in more detail below. Wafer and substrate areto be understood as including silicon-on insulator (SOI) technology,silicon-on-sapphire (SOS) technology, doped and undoped semiconductors,epitaxial layers of silicon supported by a base semiconductorfoundation, and other semiconductor structures. The terms wafer andsubstrate used in the description also includes any etchable non-siliconstructure as described in more detail below. Furthermore, when referenceis made to a wafer or substrate in the following description, previousprocess steps may have been utilized to form regions/junctions in thebase semiconductor structure or foundation.

An exemplary apparatus used in the process for depositing a platinumgroup metal according to one embodiment of the present invention isdescribed below. It is to be understood, however, that this apparatus isonly one example of many possible different apparatuses that may be usedto deposit the platinum group metal by chemical vapor depositionaccording to the invention. The invention is not intended to be limitedby the particular apparatus described below.

Referring now to FIG. 2, the apparatus is used to carry out theinvention generally indicated by reference number 10. The apparatus 10includes a flow gas source 44. The flow gas source 44 is bubbled throughthe organic platinum group metal precursor for deposition in the CVDdeposition chamber 50. The flow gas from source 44 flows through conduit51 past flow controller 12 and into the vessel 20. The flow gas may beany noble gas or gas which is non-reactive with the precursor that iscapable of carrying the organic platinum group metal precursor into thedeposition chamber.

The flow gas flows through conduit 53 past the source bubbler 16 wherethe flow gas serves to facilitate the transport of the organic platinumgroup metal precursor into the CVD deposition chamber 50 through conduit48. The gas flowing though conduit 48 is heated to a predeterminedtemperature by heater 22 before entering the CVD deposition chamber 50.The gas flows through nozzle 28 into the CVD deposition chamber 50. TheCVD deposition chamber is also heated to a predetermined reactiontemperature by heat source 34.

The temperature in the CVD deposition chamber 50 is measured by athermocouple 24 which is in contact with the substrate 26. Pressure inthe CVD deposition chamber 50 is controlled by a pump 30 and pump valve40. The pressure in the CVD deposition chamber can be determined by thepressure gauge 18. A precursor film is then deposited on the substrate26 from the gas. The substrate 26 is then irradiated by ultravioletlight 46 from ultraviolet light source 45. Once the substrate 26 hasbeen in the CVD deposition chamber 50 subject to the ultraviolet light46 for a predetermined period of time, the substrate 26 is removed fromthe CVD deposition chamber 50. The substrate 26 is then annealed in anoxygen atmosphere to remove carbon from the platinum film as describedin more detail below.

The platinum group metals which can be deposited onto the surface of asubstrate according to the present invention include Ru, Rh, Pd, Os, IrAg, Au or Pt or mixture thereof. These platinum group metals aredeposited by bubbling an organic platinum group metal precursorcontaining the desired platinum group metal into a non-reactive flowgas. Preferably the platinum group metal is platinum.

The organic platinum group metal precursor may be any suitable organiccompound which will allow the metal to deposit from the gas phase onto asubstrate under CVD conditions. The organic precursor are may be, forexample, cyclopentadienyl trimethylplatinum (IV), (C₅H₅)Pt(CH₃)₃,(hereinafter abbreviated as “(Cp)PtTM”) or a derivative thereof such as,methylcyclopentadienyl trimethylplatinum CH₃(C₅H₅)Pt(CH₃)₃ (hereinafterabbreviated as “Me(Cp)PtTM,” platinum beta-diketonates, platinumbis-(acetylacetonate), dimethyl platinum cyclopentadienide or dialkylplatinum dienes. Preferably the organic platinum precursors are (Cp)PtTMor Me(Cp)PtTM. Suitable organic precursors for the Ru, Rh, Pd, Os Ag, Auand Ir metals may also be used such as (Cp)Rh(CO)₂, Me(Cp)Rh(CO)₂, or(Cp)Ir(CO)₂.

The carrier gas into which the organic platinum group precursor isbubbled may be any suitable gas, preferably a non-reactive gas. Thepurpose of the carrier gas is to transport the organic platinum groupprecursor to the CVD deposition chamber in gaseous form so that themetal can be deposited onto the surface of a substrate in the chamber.Suitable non-reactive gases include helium, nitrogen, neon, argon,krypton, and xenon. Preferably the carrier gas is selected from helium,argon and nitrogen, most preferably helium. The carrier gas may alsocomprise mixtures of the non-reactive gases.

The non-reactive gas, together with the organic platinum group precursordissolved therein, is fed into the CVD deposition chamber at a rate ofabout 5 to about 5000 standard cubic centimeters per minute (“sccm”),more preferably from about 100 to about 2000 sccm, most preferably about1000 sccm. The flow rate of the non-reactive gas to be fed to the CVDdeposition chamber is determined based on platinum group metal to bedeposited as well as the substrate on which the metal is to bedeposited. The non-reactive gas flow rate may also vary depending uponthe temperature and pressure at which the deposition takes place, or thebubbler temperature.

In the first method according to the present invention, a substrate isplaced in a CVD deposition chamber and the flow gas is then fed to thechamber. Once the substrate has been coated by the organic precursor,the organic precursor is decomposed by irradiation with ultravioletlight to form a platinum group metal film over the substrate. Thesubstrate is then annealed in an oxygen atmosphere as described below.Additionally, the present invention includes flowing an organicprecursor over a substrate in a CVD deposition chamber while thesubstrate is being rotated to coat the entire substrate with theprecursor. The substrate is then irradiated with ultraviolet light tocause decomposition of the organic precursor to form a platinum groupmetal film. The substrate is then annealed in an oxygen atmosphere asdescribed below. A second method of the present invention includesflowing an organic precursor over a substrate in a CVD depositionchamber while the substrate is being irradiated with ultraviolet light,thereby decomposing the organic precursor to form a platinum group metalfilm. The substrate is then annealed in an oxygen atmosphere asdescribed below.

The temperature at which the CVD deposition process is operated canrange from about −100° C. to about 200° C., preferably from about 0° C.to about 150° C., most preferably about 25° C. The pressure at which theCVD deposition process is operated can range from about 0.1 to about1000 Torr. Preferably the pressure is from about 1 Torr to about 10Torr. The temperature and pressure of the CVD deposition process dependsupon the platinum group metal which is to be deposited as well as thesubstrate on which the metal is to be deposited as well as the otherreaction parameters such as reaction time or the flow rate of thematerials into the reaction vessel.

The CVD deposition of the invention is useful for depositing any of theplatinum group metals onto the surface of any substrate which will notlead to silicidation of platinum. For example, a platinum group metalmay be deposited according to the invention onto TiN, Ti, Ta, TaN, W,WN, Co, Ru, oxides any etchable non-Si substrate.

The method of the present invention is preferably used to deposit aplatinum metal film on a barrier layer formed over a silicon substrate.The barrier layer may be TiN, TaN, WN, TiAlN or the like. Because theoperation temperature of the CVD deposition and the annealing step areat a low temperature, it is possible to deposit the platinum metal filmover a barrier layer such as TiN without oxidizing the underlyingbarrier layer during the annealing step.

The method for CVD deposition a platinum group metal according to thepresent invention may deposit a continuous film of the metal having goodstep coverage to a thickness of about 20 to about 2000 Angstroms,preferably about 50 to about 400 Angstroms. In order to deposit theplatinum group metal, the substrate should remain in the CVD depositionchamber under the ultraviolet light for a time ranging from about 1 toabout 6000 seconds, preferably from about 15 to about 120 seconds, mostpreferably about 30 seconds. The time for the substrate to remain in CVDdeposition chamber in accordance with the present invention will bedetermined based on the platinum group metal which is to be deposited aswell as the substrate on which the metal is to be deposited and theintensity of the ultraviolet light source. The ultraviolet light sourcepreferably has a wavelength of less than 350 nm, more preferably about260 nm in order to effectively deposit the platinum film over thesubstrate. The timing of the reaction is also dependent upon the otherreaction parameters, such as the flow rate of the saturated organicprecursor flow gas, the temperature and the pressure at which reactiontakes place.

After the substrate is removed from the CVD chamber, the platinum metalfilm contains carbon from presence of the organic precursor. Thesubstrate must then be annealed in an oxygen environment at lowtemperature to remove the excess carbon from the platinum metal film.Preferably the low temperature annealing step is performed at atemperature of from about 150° C. to about 400° C., preferably fromabout 200° C. to about 300° C., most preferably about 250° C.

As set forth above, the ultraviolet irradiation causesphoto-decomposition of the organic platinum metal precursor. Thisphoto-decomposition forms a platinum film with a high carbon content.The oxygen annealing step removes the carbon from the platinum filmleaving a clean metallic film. The low temperature annealing step of thepresent invention allows the deposition of a barrier layer such as TiN,TaN, WN or TiAlN over the silicon substrate with subsequent depositionof a platinum metal layer over the barrier layer. The low temperatureannealing step of the present invention removes the carbon from themetal film, but does not oxidize the barrier layer, thereby eliminatingmetal silicide formation.

A second embodiment of the present invention is similar to the firstembodiment of the present invention; however, instead of irradiating thesample after waiting for the organic precursor to flow over thesubstrate, the substrate is placed in the CVD deposition chamber andwhile the organic precursor flows into the CVD deposition chamber thesubstrate is concurrently irradiated with ultraviolet light from theultraviolet light source. The temperature, pressure and other parametersare within the same ranges for the second embodiment of the invention asdescribed above with relation to the first embodiment of the presentinvention.

The invention provides a method of deposition of platinum group metalsin the presence of ultraviolet light followed by a low temperatureanneal in an oxygen atmosphere. The method creates a platinum groupmetal film that is both consistently smooth and has good step coverageas shown by the uniform platinum film along the sidewalls of the trenchshown in FIG. 3.

The combination of good step coverage and a smooth continuous film isuseful for deposition in integrated circuits, especially for the top andbottom electrode in a capacitor in a memory cell. In integrated circuitmanufacturing, there is continuous pressure to decrease the size ofindividual cells and increase memory cell density to allow more memoryto be squeezed onto a single memory chip. However, it is necessary tomaintain a sufficiently high storage capacitance to maintain a charge atthe refresh rates currently in use even as cell size continues toshrink. This requirement has led manufacturers to turn to threedimensional capacitor designs, including trench and stacked capacitors.A particular type of stacked capacitor is a container capacitor. In acontainer capacitor, it is important that the material forming theelectrode layers of the capacitor, specifically the lower electrode, beconsistently deposited with good step coverage so that the memorycircuit can take advantage of the capacitance of the deep containerwalls. The present invention provides a method for forming films ofplatinum based metals that can meet these requirements.

The invention is further explained with reference to the followingexample. This invention is not intended to be limited by the particularexample described below.

EXAMPLE

In this example a lower electrode for a capacitor in a memory cell isformed of platinum according to the present invention. Referring to FIG.4, a semiconductor wafer fragment at an early processing step isindicated generally by reference numeral 100. The semiconductor wafer100 is comprised of a bulk silicon substrate 112, which may be doped toa predetermined conductivity type, and with field isolation oxideregions 114 and active areas 116, 118, 120 formed therein. Word lines122, 124, 126, 128 have been constructed on the wafer 100 in aconventional manner. Each word line consists of a lower gate oxide 130,a lower polysilicon layer 132, a higher conductivity silicide layer 134and an insulating silicon nitride cap 136. Each word line has also beenprovided with sidewall insulating spacers 138, which are also composedof silicon nitride.

Referring now to FIG. 5, a thin layer 140 of nitride or TEOS (tetraethylorthosilicate) is then provided atop the wafer 100. Next a layer ofinsulating material 142 is deposited. The insulating material preferablyconsists of BPSG. The insulating layer 142 is subsequently planarized bychemical-mechanical polishing (CMP).

Referring now to FIG. 6, plug openings 144 have been formed through theinsulating layer 142. The plug openings 144 are formed through theinsulating layer 142 by photomasking and dry chemical etching the BPSGrelative to the thin nitride layer 140. A portion of the thin nitridelayer 140 is also removed by the etching process to arrive at thesubstrate as shown in FIG. 6.

Referring now to FIG. 7, a conductive plug layer 146 is formed. Anexample of the material used to form conductive plug layer 146 is insitu arsenic or phosphorous doped polysilicon. Referring now to FIG. 8,the conductive plug layer 146 is dry etched to a point just below theupper surface of the BPSG layer 142 such that the remaining material ofthe conductive plug layer 146 forms electrically isolated plugs 146 overthe active areas 116, 118, 120.

Referring now to FIG. 9. An additional layer 148 of BPSG was depositedon the structure and capacitor openings 150 are then formed in the BPSGlayer 148 by photomasking and dry chemical etching. The height of theplugs, as defined by the conductive plug layer 146 over the non-bit lineactive areas 116, 120 is also reduced by this step. A thin barrier layer157 deposited. Preferably the thin barrier layer 157 is formed of TiN.

Referring now to FIG. 10, a platinum layer 152 that will form the lowerelectrode of the capacitor is deposited. The platinum layer 152 isdeposited by the methods described above. The platinum is deposited byan organic platinum precursor of Me(Cp)PtTM over the substrate and thenirradiating the material with ultraviolet light to decompose the organicprecursor to form a platinum layer 152. The platinum layer 152 may beformed by depositing an organic precursor onto the substrate thenirradiating the substrate with ultraviolet light or the platinum layer152 may be formed by simultaneously irradiating the organic precursoronto the substrate in the presence of ultraviolet light as describedabove. The substrate is then annealed at low temperature in the presenceof oxygen to remove the carbon from the platinum layer 152 as describedabove. The process formed a continuous platinum layer 152 with good stepcoverage.

Since the platinum layer 152 is resistant to oxidation it provides anexcellent surface for the deposition of the high dielectric constantmaterial. In addition, the platinum layer 152 protects the top surfaceof the polysilicon plug 146 from strong oxidizing conditions duringfurther deposition. Therefore platinum is used as the lower portion ofthe first electrode since it will not oxidize during subsequentdeposition, etches or anneals. Further, since the barrier layer 157 wasdeposited prior to the platinum layer 152 and the anneal was performedat low temperature as described herein, no platinum silicide formedduring the formation of the platinum layer 152.

Referring to FIG. 11, the upper layer of the electrode 152 is removedfrom the top surface of the BPSG layer 148. Preferably this is done byCMP. A dielectric layer 153 is then deposited over the platinum layer152. The dielectric layer 153 may also be formed of any dielectricmaterial, such as tantalum pentoxide (Ta₂O₅). A second electrode maythen be deposited over the dielectric layer 153 to complete thecapacitor cell as is known in the art. Any suitable electrode materialmay be used, including but not limited to a platinum group metaldeposited according to the present invention.

It should again be noted that although the invention has been describedwith specific reference to DRAM memory circuits and containercapacitors, the invention has broader applicability and may be used inany integrated circuit requiring capacitors. Similarly, the processdescribed above is but one method of many that could be used.Accordingly, the above description and accompanying drawings are onlyillustrative of preferred embodiments which can achieve the features andadvantages of the present invention. It is not intended that theinvention be limited to the embodiments shown and described in detailherein. The invention is only limited by the spirit and scope of thefollowing claims.

1-76. (canceled)
 77. A method for depositing a platinum group metal on asubstrate, comprising: depositing said platinum group metal onto asubstrate in a CVD deposition chamber at a first predeterminedtemperature and a predetermined pressure; irradiating the chamberinterior with ultraviolet light; and annealing said substrate containingsaid deposited platinum group metal in an oxygen atmosphere at a secondpredetermined temperature.
 78. The method according to claim 77, whereinsaid platinum group metal is selected from the group consisting of Ru,Rh, Ir and Pt.
 79. The method according to claim 78, wherein saidplatinum group metal is Pt.
 80. The method according to claim 77,wherein said first predetermined temperature is from about −100° C. toabout 200° C.
 81. The method according to claim 80, wherein said firstpredetermined temperature is from about 20° C. to about 150° C.
 82. Themethod according to claim 81, wherein said first predeterminedtemperature is about 25° C.
 83. The method according to claim 77,wherein said predetermined pressure is from about 0.1 to about 1000Torr.
 84. The method according to claim 83, wherein said predeterminedpressure is from about 1 to about 10 Torr.
 85. The method according toclaim 77, wherein said substrate includes a barrier layer between saidsubstrate and said platinum group metal.
 86. The method according toclaim 85, wherein said barrier layer is formed of a material selectedfrom the group consisting of TiN, TaN, WN or TiAlN.
 87. The methodaccording to claim 85, wherein said barrier layer is formed of TiN. 88.The method according to claim 77, wherein said second predeterminedtemperature is from about 150° C. to about 400° C.
 89. The methodaccording to claim 88, wherein said second predetermined temperature isfrom about 200° C. to about 300° C.
 90. The method according to claim89, wherein said second predetermined temperature is about 250° C. 91.The method according to claim 77, wherein said platinum group metal isdeposited by forming an organic platinum group metal precursor on saidsubstrate then subsequently irradiating said precursor with saidultraviolet light to form a platinum group metal film over saidsubstrate.
 92. The method according to claim 77, wherein said platinumgroup metal is deposited by simultaneously introducing an organicplatinum group metal precursor in the presence of said ultraviolet lightto form a platinum group metal film over said substrate.
 93. A methodfor depositing a platinum group metal on a substrate, comprising:introducing a substrate into a CVD deposition chamber; bubbling a gasthrough an organic platinum group metal precursor; introducing said gasand said organic platinum group metal precursor to said CVD depositionchamber; allowing said organic precursor to coat said substrate;irradiating said organic precursor with ultraviolet light in said CVDdeposition chamber at a first predetermined temperature and apredetermined pressure for a predetermined time to decompose saidorganic precursor and form a platinum group metal film onto saidsubstrate; and annealing said substrate in an oxygen atmosphere at asecond predetermined temperature.
 94. The method according to claim 93,wherein said organic platinum group metal precursor comprises a platinumgroup metal selected from the group consisting of Ru, Rh, Ir and Pt. 95.The method according to claim 93, wherein said organic platinum groupmetal precursor is selected from the group consisting ofcyclopentadienyl trimethylplatinum (IV) and methylcyclopentadienyltrimethylplatinum CH₃(C₅H₅)Pt(CH₃)₃.
 96. The method according to claim93, wherein said organic platinum metal precursor ismethylcyclopentadienyl trimethylplatinum CH₃(C₅H₅)Pt(CH₃)₃.
 97. Themethod according to claim 93, wherein said first predeterminedtemperature is from about −1° C. to about 200° C.
 98. The methodaccording to claim 93, wherein said predetermined pressure is from about0.1 to about 1000 Torr.
 99. The method according to claim 93, whereinsaid predetermined time is from about 15 to about 6000 seconds.
 100. Themethod according to claim 93, wherein said substrate includes a barrierlayer.
 101. The method according to claim 93, wherein said secondpredetermined temperature is from about 100° C. to about 400° C. 102.The method according to claim 93, further comprising rotating saidsubstrate in the CVD deposition chamber to coat said substrate with saidorganic platinum group metal precursor.
 103. The method according toclaim 93, wherein said platinum group metal is deposited at a thicknessof about 20 to about 2000 Angstroms.
 104. The method according to claim103, wherein said platinum group metal is deposited at a thickness ofabout 50 to about 400 Angstroms.
 105. The method according to claim 93,wherein said platinum group metal is deposited by forming an organicplatinum group metal precursor on said substrate and subsequentlyirradiating said precursor with said ultraviolet light to form aplatinum group metal film over said substrate.
 106. The method accordingto claim 93, wherein said platinum group metal is deposited byintroducing said organic platinum group metal precursor in the presenceof said ultraviolet light to form a platinum group metal film over saidsubstrate.
 107. A method for depositing a platinum group metal on asubstrate, comprising: introducing a substrate into a CVD depositionchamber; introducing an organic platinum group metal precursor to saidCVD deposition chamber and irradiating said organic precursor withultraviolet light in said CVD deposition chamber at a firstpredetermined temperature and a predetermined pressure for apredetermined time to decompose said organic precursor and form aplatinum group metal film on said substrate; and annealing saidsubstrate in an oxygen atmosphere at second predetermined temperature.108. The method according to claim 107, wherein said platinum groupmetal is deposited by forming an organic platinum group metal precursoron said substrate then subsequently irradiating said precursor with saidultraviolet light to form a platinum group metal film over saidsubstrate.
 109. The method according to claim 108, wherein said platinumgroup metal film is simultaneously deposited by introducing said organicplatinum group metal precursor in the presence of said ultraviolet lightto form a platinum group metal film over said substrate.
 110. The methodaccording to claim 107, wherein said organic platinum group metalprecursor is selected from the group consisting of cyclopentadienyltrimethylplatinum (IV) and methylcyclopentadienyl trimethylplatinumCH₃(C₅H₅)Pt(CH₃)₃.